Improved thermal stability of AlGaAsyGaAsyAlGaAs single quantum well by growth on Zn-doped GaAs (001)
نویسندگان
چکیده
The effects of Zn doping in the substrate on the thermal stability of GaAsyAl Ga As single quantum well are investigated 0.24 0.76 by 900 8C rapid thermal annealing and low-temperature (12 K) photoluminescence measurements. An improvement in thermal stability is demonstrated for structures grown on Zn-doped GaAs in comparison with those grown on semi-insulating and Sidoped GaAs substrates. It is likely that the Zn out-diffusion from the substrate to the quantum well region has lowered the Al– Ga interdiffusion coefficient. 2003 Elsevier Science B.V. All rights reserved.
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